Impacts of NH 3 as an Impetus on the Metalorganic Compound Vapor Statement of Al 2 O 3.

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Impacts of NH 3 as an Impetus on the Metalorganic Synthetic Vapor Affidavit of Al 2 O 3 Last Presentation for REU program August 3 rd , 2006 Ashlynne Rhoderick College of South Carolina Division of Compound Building Consultant: Dr. Christos Takoudis College Of Illinois-Chicago
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Impacts of NH 3 as a Catalyst on the Metalorganic Chemical Vapor Deposition of Al 2 O 3 Final Presentation for REU program August 3 rd , 2006 Ashlynne Rhoderick University of South Carolina Department of Chemical Engineering Advisor: Dr. Christos Takoudis University Of Illinois-Chicago Department of Chemical Engineering

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Motivation for Research Need for expanded circuit thickness Fitting more transistors on every wafer Physical breaking point of SiO 2 High spillage momentum Reliability Boron entrance Finding another dielectric SiO 2 κ = 3.9 Need a higher κ dielectric C= Îºîµ 0 A/t C-capacitance κ - dielectric coefficient (or relative permittivity) ε 0 - permittivity of free space (8.85*10 - 3 fF/μ m) A-range of capacitor t-thickness of the dielectric pictures/movies.html

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Why Al 2 O 3 as a conceivable dielectric? Positive attributes κ =9 Thermodynamically stable in contact with Si Very steady, vigorous High band hole (9 eV) It can joined with other high k dielectric material Experiment with NH 3 Hope that it will Increase the testimony rate of Al 2 O 3 Decrease affidavit temperature Decrease measure of polluting influences in film

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Set Up of Experiment Cut 2 cm x 2 cm silicon wafers Cleaning system Ultrasonic cleaning-releases particles (1 min) Distilled water-evacuates particles (3 min) 4:1 H 2 SO 4/H 2 O 2 - uproot natural material (15 min) Distilled water (3 min) 49% HF-evacuate local silicon oxide (15 sec) Distilled water (3 min) Dry with nitrogen

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Metal Organic Chemical Vapor Deposition Reaction conditions Deposition temperature: 100 , 200, 300, 400, and 500C Deposition weight: 0.7-0.8 torr Anand Deshpande Ph.D. Proposal, UIC (2005)

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Analysis Techniques Ellipsometric Spectroscopy Thickness X-Ray Photoelectron Spectroscopy (XPS) Stoichiometry, Composition Fourier Transform Infrared Spectroscopy (FTIR) Composition

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Comparing the Results

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XPS Analysis O 1s Ar Al 2p C 1s N 1s

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XPS Analysis: Stoichiometric From 2006 investigations 2004 examinations by A. Roy Chowdhuri and C.G. Takoudis Stoichiometric proportion of O/Al was 2.0 ± 0.1

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FTIR Analysis

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Conclusions and Future Work NH 3 brought the affidavit rate up in the temperature scope of 200-300 °C Without Ammonia Absorption controlled until 300°C Reaction controlled after 300°C With Ammonia Reaction controlled from 100-300°C At 100°C smelling salts gets assimilated hence less TMA is consumed results in lower Al 2 O 3 testimony rate Purity of the film was not traded off Continue to flawless utilization of NH 3 in the statement of Al 2 O 3

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References Brewer, R.T. et al. (2004) Ammonia pretreatment for high-k dielectric development on silicon. Connected Physics Letters. 85, 3830-3832. Chowdhuri, A. Roy and Takoudis, C.G. (2004) Investigation of the aluminum oxide/Si (1 0 ) interface framed by substance vapor affidavit. Dainty Solid Films. 446, 155-159. Hiremane, Radhakrishna. (2005) From Moore’s Law to Intel Innovation—Prediction to Reality. Innovation @ Intel Magazine. 1-9. Jung, Sung-Hoon and Kang, Sang-Won (2001) Formation pf TiO 2 Thin Films utilizing NH 3 as Catalyst by Metalorganic Chemical Vapor Deposition. Japan Society of Applied Physics 40, 3147-3152. Klaus, J.W. furthermore, George, S.M. (2000) Atomic layer affidavit of SiO 2 at room temperature utilizing NH 3 - catalyzed successive surface responses. Surface Science. 447, 81-90. Klein, T.M. et al. (1999) Evidence of aluminum silicate arrangement amid concoction vapor testimony of nebulous Al 2 O 3 slim movies on Si(100). Connected Physics Letters. 75, 4001-4003. Krug, C. et al. (2000) Atomic Transport and Chemical Stability amid Annealing of Ultrathin Al 2 O 3 Films on Si. 85, 4120-4123. Ong, C.W. et al. (1997) Structural Studies of responsive Pulsed Laser-Deposited CN x Films by X-beam Photoelectron Spectroscopy and Infrared Absorption. Diary of The Electrochemical Society. 32, 2347-2352. Ogita, Y. et al. (2003) Al 2 O 3 arrangement on Si by synergist substance vapor testimony. Slender Solid Films. 430, 161-164. Pradhan, Siddhartha K. et al (2003). Development of TiO2 nanorods by metalorganic concoction vapor affidavit. Diary of Crystal Growth. 256, 83-88. Takahashi, Hisao et al. (1991). Modifications in Hepatic Lipids and Proteins by Chronic Ethanol Intake: A High-Pressure Fourier Transform Infrared Spectroscopic Study on Alcoholic Liver Disease in the Rat. Liquor abuse: Clinical and Experimental Research. 15, 219. Wilk G.D. furthermore, Wallace, R.M. (2001) Exploring the Limits of Gate Dielectric Scaling. Semiconductor International. 153-158. Wilk, G.D. et al. (2001) High-k door dielectrics: Current status and materials properties contemplations. Connected Physics Review 89, 5243-5275. Wilk G.D. what\'s more, Wallace, R.M. (2002) High K Gate Dielectric Materials. MRS Bulletin. 192-197.

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Acknowledgments NSF EEC-0453432 Grant, Novel Materials and Processing in Chemical and Biomedical Engineering (Director C.G. Takoudis), subsidized by the DoD-ASSURE and NSF-REU Programs NSF CTS-0630470 & 0434201 GOALI: Atomic-scale Investigation of High Dielectric Constant Thin Films Using In Situ and Other Techniques, (Director C.G. Takoudis) REU program at the University of Illinois-Chicago NSF and DoD Peggy Song Dr. Christos

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