Materials Science and Engineering Aspects of Nanostructures and Nanomaterials .


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Materials Science and Engineering Aspects of Nanostructures and Nanomaterials. Gottlieb S. Oehrlein Department of Materials & Nuclear Engineering & Institute for Research in Electronics and Applied Physics University of Maryland, College Park, MD 20742‑2115 *oehrlein@glue.umd.edu.
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Materials Science and Engineering Aspects of Nanostructures and Nanomaterials Gottlieb S. Oehrlein Department of Materials & Nuclear Engineering & Institute for Research in Electronics and Applied Physics University of Maryland, College Park, MD 20742‑2115 *oehrlein@glue.umd.edu

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Semiconducting (electronic, optoelectronic, and so on.) Magnetic Dielectric Metallic Organic Biological Synthesis of nanoscale bunches, nanocrystalline materials Self-get together Nanoscale materials portrayal Functional materials Combinatorial union Biomimetic approaches Top-down nanostructure manufacture, detecting, control Nanoscience and Nanomaterials Research Topics Materials

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Mohamad Al-Sheikhly (DNA selfassembly on semiconductors and covers) Sreeramamurthy Ankem (Ti amalgams, biocompatibility, nanoscale surface changes) Robert Briber* (natural nanomaterials + portrayal) Aris Christou* (inorganic selfassembly) John Kidder* (concoction vapor testimony, nanoscale particles) Peter Kofinas* (selfassembly of natural, templating) Isabel Lloyd (sintering of nano particles) Luz Martinez-Miranda (fluid precious stones, nanoscale portrayal) Gottlieb Oehrlein* (plasma handling of nanomaterials and nanostructures) Nanoscience and Nanomaterial Activities Ray Phaneuf* (nanoscale portrayal) Ramamoorthy Ramesh* (attractive oxides, nanoscale selfassembly, utilitarian materials) Gary Rubloff (nanoscale creation, detecting and control) Alexander Roytburd (strain displaying of nanomaterials) Ichiro Takeuchi (combinatorial union) Lourdes Salamanca-Riba* (portrayal of nanoscale structures and materials) Otto Wilson, Jr. (biomimetic ways to deal with novel materials) Manfred Wuttig (useful materials, stage changes in nanocrystals) Examples of research will be examined in this discussion

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Nanotechnology and Nanomaterials Nanoscale Characterization Selfassembly Organic nanomaterials & templating Processing of nanomaterials & novel impacts Top-down nano-lithograpy - development of nano-scale structures and gadgets

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Preamp x y z actuator STM ADC/DAC interface Vp Summing # 1 p Lock-in amp n Mod\'n voltage Depletion zone Summing # 2 Vn 0V - 10V V r Scanning Tunneling Microscopy and Spectroscopy Characterization of Electronic Devices - Phaneuf Topography and Conductance Images of pn gadgets on Si under factor invert predisposition

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Tunable PbSe QD Superlattices with PbEuTe Spacer Layers Obtained by MBE - TEM Characterization Salamanca-Riba , Springholz, Bauer (Linz, Austria) PbSe (IV-VI) Q.D. /Pb 1-x Eu x Te * superlattice on PbTe (111) for mid-IR lasers and indicators, thermoelectric materials Exploit: Tensile strain for PbSe Q.D. (5.5% befuddle between PbSe & PbTe) PbSe; 6.124å PbTe; 6.443å Pb 1-x Eu x Te (x=0.07); 6.467å High versatile anisotropy L MBE development S-K development mode Deposit 5 PbSe ML/speck Variables; - Spacer thickness (32-312nm) - Growth temperature (335 o C, 380 º C) Analysis - TEM: Shape and size of covered dabs Dot stacking - AFM: Shape and size of surface dabs PbSe Pb 1-x Eu x Te Spacer* N periods PbSe Pb 1-x Eu x Te Spacer* D PbSe PbTe cushion layer (2µm) wetting layer BaF 2 (111) L: in-plane spot to-dab separate D: Spacer layer thickness * x = 0.05 ~ 0.1

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(b) Pyramid shape Q.D.s (base=30nm, height=12nm) for 35nm<D Tunable PbSe QD Superlattices with PbEuTe Spacer Layers Obtained by MBE - TEM Characterization Salamanca-Riba , Springholz, Bauer (Linz, Austria) first. Q.D. layer 60th Period Q.D. (an) In plane speck dispersions for 35nm<D<69nm

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Tunable PbSe QD Superlattices with PbEuTe Spacer Layers Obtained by MBE - TEM Characterization Salamanca-Riba , Springholz, Bauer (Linz, Austria) 43 nm spacer layer thickness electron shaft Dots are put at the base versatile vitality thickness position as for the dabs of past layer

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3-D Schematic of Pseudo fcc Unit Cell Tunable PbSe QD Superlattices with PbEuTe Spacer Layers Obtained by MBE - TEM Characterization Salamanca-Riba , Springholz, Bauer (Linz, Austria) where L : nearest spot dab separate D : the spacer thickness  : the trigonal edge (39º) 14% packed along the trigonal heading

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InAs Self Assembled Quantum Dots (QD) for Nano-Lasers Christou InAs/InAlAs/InGaAs on (110) InP Quantum Dots by means of Self Assembly Cathodoluminescence spectra at 10-13 meV FWHM Excitonic Transitions through PL.

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AFM SPONTANEOUS ASSEMBLY of PdO2 TIPS FOR FIELD EMISSION APPLICATIONS - Ramesh Formed by oxidation of metal film 50x50 m PEEM

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Nucleation and Morphology Evolution in Chemical Vapor Deposition - Praertchoung, Kidder In ULSI gadgets, Nano-Scale Morphology and Surface Features are Critical Atomic compel microscopy pictures of Ta 2 O 5 thin movies developed on Si(100) by substance vapor affidavit. Early phase of cores development recognized after 5 min, trailed by mixture and roughening. NEXT STEP Atomic Layer Deposition system will be considered for control of nucleation and surface morphology. 1 min 5 min 5 nm islands 10 min 15 min Work bolstered by University of Maryland - NSF - MRSEC  (NSF-DMR-00-80008)

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Blocks of successions of rehash units of one homopolymer artificially connected to squares of another homopolymer arrangement. Microphase detachment because of square incongruence Templates for amalgamation of metal and metal oxide nanoclusters A-Block B-Block Chemical Link 0 - 21 % 21 - 34 % 34 - 38 % 38 - 50 % Increasing Volume Fraction of Minority part Block Copolymer Nanotemplates Kofinas

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Metal Oxide Nanoclusters Kofinas Mixed Metal Oxide Magnetic Nanoclusters Piezoelectric Nanoclusters CoFe 2 O 4 Hard attractive material High coercivity Moderate immersion charge Can be utilized for high thickness memory gadgets ZnO Wide band crevice semiconductor (3.3eV) Electro-acoustic gadgets (Piezoelectric) Conductive layer in sun powered cells UV emitter weight sensors for tires

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Nanoporous PMSSQ Synthesis Schematic Dielectric steady versus porogen content Nanoporous Dielectrics by Polymer Templating Briber, R.L. Mill operator, E. Huang, P. Rice (IBM Almaden Research Center) Objective: Characterize nanoporous low k dielectrics for cutting edge interlayer materials Nanoporous dielectrics are integrated from poly(methylsilsesquioxane) (PMSSQ) by templating the pore structure with polymers (named porogens ). A blend of MSSQ and porogen is turn thrown, cured and warm treated (450°C) to debase the porogen and frame the pores. A nanoporous structure will bring down the dielectric consistent (of PMSSQ). The morphology of the pores (estimate, shape, network) will control numerous properties of the materials. Approach: Use TEM, neutron scrambling and neutron reflectivity to decide the pore structure. Little edge neutron dissipating to take after the development of pore structure in-situ utilizing deuterated porogen polymer.

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TEM Results (FIB test arrangement): Nanoporous movies are framed by corruption of the porogen. A permeation move from disengaged to interconnected pores is seen at ~30% porogen content. Pore measure/dividing is 6-25nm (contingent upon amalgamation points of interest). SANS Results : Structural advancement is seen amid cure from low temperature (green bend) to high temperature (blue bend). Endless supply of the porogen and development of the pores the diffusing force is lost (open dark triangles) as a result of the little neutron scrambling contrast between the pores and the grid. Nanoporous Dielectrics by Polymer Templating Briber, R.L. Mill operator, E. Huang, P. Rice (IBM Almaden Research Center)

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Plasma-Based Pattern Transfer into Nanoporous Silica – Oehrlein, Standaert (IBM), Gill, Plawsky (RPI) 50 sccm, 10 mTorr, 1400 W

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Plasma-Based Pattern Transfer into Nanoporous Silica – Oehrlein, Standaert (IBM), Gill, Plawsky (RPI) CHF 3 (50 sccm, 10 mTorr, 1400 W, - 125V, 40 sec) Fairly attractive example exchange Low engraving selectivity in respect to SiN draw stop layer Photoresist Xerogel Si 3 N 4 Etch Stop Layer

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Plasma-Based Pattern Transfer into Nanoporous Silica – Oehrlein, Standaert (IBM), Gill, Plawsky (RPI) 50 sccm, 10 mTorr, 1400 W

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Plasma-Based Pattern Transfer into Nanoporous Silica – Oehrlein, Standaert (IBM), Gill, Plawsky (RPI) More CFx material on permeable silica than on SiO 2 Porous silica carve rate is smothered as CFx material develops Schematic Picture of Surface R c =SiO 2/nanoporous silica scratch rate proportion

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Fabrication of Ferroelectric Nano-capacitors Ramesh, Melngailis (ECE/IREAP) Ferroelectric materials show a wide scope of profitable physical properties they display, with potential applications in data stockpiling advances. To be focused, ferroelectric recollections must be actualized at densities of the request of 1Gbit on a 1cm x 1cm chip. This requires the diminishment in the horizontal measurements of the capacity component into the sub-micron run. For instance, it is normal that a Gbit chip will have capacity capacitor ranges of the request of 100nm x 100nm, in a planar game plan.

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Fabrication and Characterization of Nanoscale Wires Oehrlein, Kuan (SUNY), Rossnagel (IBM) Electron-pillar lithography of PMMA oppose High-thickness plasma carving of 20-50 nm wide trenches in SiO 2 High-thickness plasma testimony of Cu Removal of abundance Cu by compound mechanical planarization

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