Magnetoelectric Random Access Memory (MeRAM) characteristics and tunneling magnetoresistance ratio (TMR)
This article discusses the characteristics of MeRAM in the context of the research being conducted by the NanoCAD group at UCLA.
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About Magnetoelectric Random Access Memory (MeRAM) characteristics and tunneling magnetoresistance ratio (TMR)
PowerPoint presentation about 'Magnetoelectric Random Access Memory (MeRAM) characteristics and tunneling magnetoresistance ratio (TMR)'. This presentation describes the topic on This article discusses the characteristics of MeRAM in the context of the research being conducted by the NanoCAD group at UCLA.. The key topics included in this slideshow are . Download this presentation absolutely free.
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Slide1Magnetoelectric Random AccessMemory (MeRAM) Shaodi Wang NanoCAD Group, UCLA Puneet Gupta (puneet@ee.ucla.edu) 1
Slide2NanoCAD LabSTT Characteristics Shaodi Wang (shaodiwang@ucla.edu) 2 • Tunneling Magnetoresistance Ratio: – TMR = (R AP – R P )/ R P = 100 – 200% • Resistance around 1k Ω • Read/Write current : 0.x mA – Read current must be smaller than write current • Energy consumption mainly comes from leakage current during read/write Fixed MgO Free
Slide3NanoCAD LabMeRAM Structure Shaodi Wang (shaodiwang@ucla.edu) 3 J. G. Alzate et. al., IEDM, 2012 C.J. Lin et. al., IEDM, 2009
Slide4NanoCAD LabVCMA-Induced Switching • Coercivity -The intensity of the applied magnetic field required to reduce the saturated magnetization of that material to zero. • Voltage Controlled Magnetic Anisotropy (VCMA) -The coercivity can be reduced from ~ 120 Oe at equilibrium to ~ 10-20 Oe by applying voltages ~ 1 V due to the VCMA effect Shaodi Wang (shaodiwang@ucla.edu) 4 J. G. Alzate et. al., IEDM, 2012
Slide5NanoCAD LabSwitching Shaodi Wang (shaodiwang@ucla.edu) 5 J. G. Alzate et. al., IEDM, 2012
Slide6NanoCAD LabSwitching Control Puneet Gupta (puneet@ee.ucla.edu) 6 I switch =V/R inter
Slide7NanoCAD LabVariation Impact Puneet Gupta (puneet@ee.ucla.edu) 7 12 σ 12 σ 12 σ 12 σ 12 σ 12 σ STT RAM MeRAM Variability: Non-uniformity in fabrication of MTJ devices results in variances in read and write processes
Slide8NanoCAD LabThanks Shaodi Wang (shaodiwang@ucla.edu) 8
